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this is information on a product in full production. may 2014 docid16558 rev 16 1/23 23 2n2222ahr hi-rel 40 v, 0.8 a npn transistor datasheet - production data figure 1. internal schematic diagrami features ? hermetic packages ? escc and jans qualified ? up to 100 krad(si) low dose ratee description the 2n2222ahr is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 ub 3 1 2 3 1 2 4 pin 4 in ub is connected to the metallic lid. parameter escc jans bv ceo min 40 v 50 v i c (max) 0.8 a h fe at 10 v - 150 ma 100 table 1. device summary device qualification system agency specification package radiation level eppl jansr2n2222aubx jansr mil-prf-19500/291 ub 100 krad high and low dose rate - jans2n2222aubx jans mil-prf-19500/291 ub - - 2n2222arubx escc flight 5201/002 ub 100 krad - low dose rate target 2n2222aubx escc flight 5201/002 ub - target soc2222arhrx escc flight 5201/002 lcc-3 100 krad - low dose rate yes soc2222ahrx escc flight 5201/002 lcc-3 - yes 2n2222arhrx escc flight 5201/002 to-18 100 krad - low dose rate target 2n2222ahrx escc flight 5201/002 to-18 - - www.st.com
contents 2n2222ahr 2/23 docid16558 rev 16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 jans electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 escc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 ub . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 lcc-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 to-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid16558 rev 16 3/23 2n2222ahr electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v ceo collector-emitter voltage (i b = 0) for jans devices 50 v collector-emitter voltage (i b = 0) for escc devices 40 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 0.8 a p tot total dissipation at t amb 25 c escc: to-18 lcc-3 and ub lcc-3 and ub (1) jans: lcc-3ub total dissipation at t case 25 c escc: to-18 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.5 0.5 0.73 0.5 1.8 w total dissipation at t sp(is) = 25 c jans: ub 1 w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter lcc-3 and ub to-18 unit r thjc thermal resistance junction-case (max) for jans - - c/w thermal resistance junction-case (max) for escc - 97 rt hjsp(is) thermal resistance junction-solder pad (infinite sink) (max) for jans 90 - thermal resistance junction-solder pad (infinite sink) (max) for escc -- r thja thermal resistance junction-ambient (max) for jans 325 - thermal resistance junction-ambient (max) for escc 350 240 (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 350
electrical characteristics 2n2222ahr 4/23 docid16558 rev 16 2 electrical characteristics jans and escc version of the products are assembled and tested in compliance with the agency specification it is qualified in. the electrical characteristics of each version are provided in dedicated tables. t case = 25 c unless otherwise specified. 2.1 jans electrical characteristics table 4. jans electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 75 v v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 10 a na a i ces collector cut-off current (i e = 0) v ce = 50 v - 50 na i ebo emitter cut-off current (i c = 0) v eb = 6 v v eb = 4 v - 10 10 a na v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 50 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.3 1 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma 0.6 1.2 2 v v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 50 75 100 100 30 35 - 325 300 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz v ce = 10 v i c =1 ma f = 1 khz 2.5 50 - c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf c ibo output capacitance (i e = 0) v eb = 0.5 v 100 khz f 1 mhz -25pf
docid16558 rev 16 5/23 2n2222ahr electrical characteristics 2.2 escc electrical characteristics t on turn-on time v cc = 30 v i c = 150 ma i b1 = 15 ma -35ns t off turn-off time v cc = 30 v i c = 150 ma i b1 = -i b2 = 15 ma - 300 ns 1. pulsed duration = 300 s, duty cycle 2 % table 4. jans electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit table 5. escc electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 na a i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 75 - v v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 30 ma 40 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma - 0.3 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 0.87 1.2 v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 35 75 100 40 35 - 300 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz 3-10 c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf
electrical characteristics 2n2222ahr 6/23 docid16558 rev 16 2.3 electrical characteristics (curves) t on turn-on time v cc = 30 v i c = 150 ma i b1 = 15 ma -35ns t off turn-off time v cc = 30 v i c = 150 ma i b1 = -i b2 = 15 ma - 285 ns 1. pulsed duration = 300 s, duty cycle 2 % table 5. escc electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit figure 2. safe operating area for lcc-3 and ub figure 3. safe operating area for to-18 figure 4. dc current gain figure 5. collector emitter saturation voltage , & 9 &( 9 $ ?v ?v pv '&2shudwlrq *,3*)65 , & 9 &( 9 $ ?v ?v pv '&2shudwlrq *,3*)65 $0y ,f$ ( ?& ?& ?& 9 &( 9 $0y ?& ,f$ ?& ?& k )(
docid16558 rev 16 7/23 2n2222ahr electrical characteristics 2.4 test circuits figure 7. jans saturated turn-on switching time test circuit figure 6. base emitter saturation voltage $0y ,f$ ?& ?& ?& k )(
electrical characteristics 2n2222ahr 8/23 docid16558 rev 16 figure 8. jans saturated turn-off switching time test circuit figure 9. escc resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor
docid16558 rev 16 9/23 2n2222ahr radiation hardness assurance 3 radiation hardness assurance the products guaranteed in radiation within the jans system fully comply with the mil- prf-19500/255 specification. the products guaranteed in radiation within the escc system fully comply with the escc 5201/002 and escc 22900 specifications. jans radiation assurance st jans parts guaranteed at 100 krad (si), tested, in full compliancy with the mil-prf- 19500 specification, specifically the group d, subgroup 2 inspection, between 50 and 300 rad/s. on top of the standard jansr high dose rate by wafer lot guarantee, st 2n2222ahr series include an additional wafer by wafer 100 krad low dose rate guarantee at 0.1 rad/s, identical to the escc 100 krad guarantee. it is supported with the same radiation verification test report provided with each shipment. a brief summary of the standard high dose rate by wafer lot jansr guarantee is provided below: ? all test are performed in accordance to mil-prf-19500 and test method 1019 of mil-std-750 for total ionizing dose. ? the table below provides for each monitored parameters of the test conditions and the acceptance criteria table 6. mil-prf-19500 (test method 1019) post radiation electrical characteristics symbol parameter test conditions value unit min. max. i cbo collector to base cutoff current v cb = 75 20 a v cb = 60 v 20 na i ebo emitter to base cutoff current v eb = 6 v 20 a v eb = 4 v 20 na v (br)ceo breakdown voltage, collector to emitter i c = 10 ma 50 v i ces collector to emitter cutoff current v ce = 50 v 100 na h fe forward-current transfer ratio v ce = 10 v; i c = 0.1 ma [25] (1) v ce = 10 v; i c = 1.0 ma [37.5] (1) 325 v ce = 10 v; i c = 10 ma [50] (1) v ce = 10 v; i c = 150 ma [50] (1) 300 v ce = 10 v; i c = 500 ma [15] (1) v ce(sat) collector-emitter saturation voltage i c = 150 ma; i b = 15 ma 0.35 v i c = 500 ma; i b = 50 ma 1.15 v be(sat) base-emitter saturation voltage i c = 150 ma; i b = 15 ma 0.6 1.38 v i c = 500 ma; i b = 50 ma 2.3
radiation hardness assurance 2n2222ahr 10/23 docid16558 rev 16 escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 8 ? delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c. 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. table 7. radiation summary radiation test 100 krad escc wafer test each part tested 5 biased + 5 unbiased dose rate 0.1 rad/s acceptance mil-std-750 method 1019 displacement damage optional agency part number (ex) 5202/001/02 (1) 1. example of the 2n2222a in lcc-3 gold finish. st part number (ex) soc2222arhrg documents coc + rvt
docid16558 rev 16 11/23 2n2222ahr radiation hardness assurance table 8. escc 5201/002 post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v - 10 na i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 75 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2 % collector-emitter breakdown voltage (i b = 0) i c = 30 ma i c = 10 ma 40 50 - v v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma - 0.3 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 1.2 v [h fe ] (1) post irradiation gain calculation (2) 2. the post-irradiation gain calculation of [h fe ], made using h fe measurements from prior to and on completion of irradiation testing and after each anneali ng step if any, shall be as specified in milstd-750 method 1019. i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v [17.5] [37.5] [50] [20] - 300
package mechanical data 2n2222ahr 12/23 docid16558 rev 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 9. product mass summary package mass (g) ub 0.06 lcc-3 0.06 to-18 0.40
docid16558 rev 16 13/23 2n2222ahr package mechanical data 4.1 ub figure 10. ub drawings
package mechanical data 2n2222ahr 14/23 docid16558 rev 16 table 10. ub mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.46 0.51 0.56 d 0.56 0.76 0.96 e 0.92 1.02 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.18 i 2.41 2.54 2.67 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.41 0.51 0.61 m 2.46 2.54 2.62 n 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56
docid16558 rev 16 15/23 2n2222ahr package mechanical data 4.2 lcc-3 figure 11. lcc-3 drawings 2 1 3
package mechanical data 2n2222ahr 16/23 docid16558 rev 16 table 11. lcc-3 mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.45 0.50 0.56 d 0.60 0.76 0.91 e 0.91 1.01 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.17 i 2.41 2.54 2.66 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.40 0.50 0.60 m 2.46 2.54 2.62 n 1.80 1.90 2.00 r 0.30
docid16558 rev 16 17/23 2n2222ahr package mechanical data 4.3 to-18 figure 12. to-18 drawings table 12. to-18 mechanical data dim. mm. min. typ. max. a 12.7 b 0.49 d 5.3 e 4.9 f 5.8 g 2.54 h 1.2 i 1.16 l 45
order codes 2n2222ahr 18/23 docid16558 rev 16 5 order codes table 13. ordering information cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing j2n2222aub1 - - engineering model jans - ub gold j2222aub1 wafflepack 2n2222aub1 - - engineering model escc - ub gold 2n2222aub1 wafflepack soc2222a1 - - engineering model escc - lcc-3 gold soc2222a1 wafflepack jansr2n2222aubg mil-prf- 19500/255 - jansr 100 krad high and low dose rate ub gold jsr2222 wafflepack jansr2n2222aubt mil-prf- 19500/255 - jansr 100 krad high and low dose rate ub solder dip jsr2222 wafflepack jans2n2222aubg mil-prf- 19500/255 - jans - ub gold js2222 wafflepack jans2n2222aubt mil-prf- 19500/255 - jans - ub solder dip js2222 wafflepack 2n2222arubg 5201/002/11r target escc flight 100 krad - low dose rate ub gold 520100211r wafflepack 2n2222arubt 5201/002/12r target escc flight 100 krad - low dose rate ub solder dip 520100212r wafflepack 2n2222aubg 5201/002/11 target escc flight - ub gold 520100211 wafflepack 2n2222aubt 5201/002/12 target escc flight - ub solder dip 520100212 wafflepack soc2222arhrg 5201/002/04r yes escc flight 100 krad - low dose rate lcc-3 gold 520100204r wafflepack soc2222arhrt 5201/002/05r yes escc flight 100 krad - low dose rate lcc-3 solder dip 520100205r wafflepack soc2222ahrg 5201/002/04 yes escc flight - lcc-3 gold 520100204 wafflepack soc2222ahrt 5201/002/05 yes escc flight - lcc-3 solder dip 520100205 wafflepack 2N2222ARHRG 5201/002/01r target escc flight 100 krad - low dose rate to-18 gold 520100201r strip pack 2n2222arhrt 5201/002/02r target escc flight 100 krad - low dose rate to-18 solder dip 520100202r strip pack
2n2222ahr order codes docid16558 rev 16 19/23 contact st sales office for information about the specific conditions for: ? products in die form ? other jans quality levels ? tape and reel packing 2n2222ahrg 5201/002/01 - escc flight - to-18 gold 520100201 strip pack 2n2222ahrt 5201/002/02 - escc flight - to-18 solder dip 520100202 strip pack 1. high dose rate as per mil-prf-19500 specif ication group d, subgroup 2 inspection. low dose rate as per escc specification 229 00. 2. specific marking only. the full marking includes in addition: for the engineering models: st logo, date code; country of orig in (fr). for escc flight parts: st logo, date code, country of origin (fr), esa logo, serial number of the part within the assembly lot. for jans flight parts: st logo, date code, country of origin (fr), manufacturer code (cstm), serial number of the part within the assembly lot. table 13. ordering information (continued) cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing
shipping details 2n2222ahr 20/23 docid16558 rev 16 6 shipping details 6.1 date code date code xyywwz is structured as below table: 6.2 documentation table 14. date code xyywwz e m (escc & jans) 3 last two digits of the year week digits lot index in the week e s c c flight - j a n s f l i g h t (diffused in singapore) w table 15. documentation provided for each type of product quality level radiation level documentation engineering model - - jans flight - certificate of conformance jansr flight mil-std 100krad certificate of conformance 50 rad/s radiation verification test report st 100krad certificate of conformance 0.1 rad/s radiation verification test report on each wafer escc flight - certificate of conformance 100 krad certificate of conformance 0.1 rad/s radiation verification test report
docid16558 rev 16 21/23 2n2222ahr revision history 7 revision history table 16. document revision history date revision changes 04-jan-2010 1 initial release 16-apr-2010 2 added table 1 on page 1 09-jul-2010 3 modified: table 1 on page 1 and table 12 on page 17 30-nov-2011 4 ? modified: table 5 on page 5 ? added: section 2.3: electrical characteristics (curves) ? modified: table 1 and 2 ? added: table 2 , 11 , 12 ? minor text changes in the document title and description on the cover page. 12-dec-2011 5 minor text changes to improve readability 17-apr-2012 6 updated: ? title and description in cover page. ?p tot in table 2: absolute maximum ratings . ? the entire section 2: electrical characteristics . added: ? table 3: thermal data , section 3: radiation hardness assurance and table 13: ordering information . ? figure 7: jans saturated turn-on switching time test circuit and figure 8: jans saturated turn-off switching time test circuit . ? section 6: shipping details . 19-apr-2012 7 updated titles in figure 7: jans saturated turn-on switching time test circuit and figure 8: jans saturated turn-off switching time test circuit . 24-apr-2012 8 updated r thja value in table 3: thermal data . 14-may-2012 9 updated table 13: ordering information . 21-feb-2013 10 table 1: device summary and table 13: ordering information have been updated. updated text in section 3: radiation hardness assurance . 04-apr-2013 11 inserted table 7: radiation summary 06-jun-2013 12 updated package name for ub. 18-sep-2013 13 table 1: device summary and table 13: ordering information have been updated. 25-mar-2014 14 table 1: device summary and table 13: ordering information have been updated. updated section 3: radiation hardness assurance .and section 4: package mechanical data inserted figure 2: safe operating area for lcc-3 and ub and figure 3: safe operating area for to-18
revision history 2n2222ahr 22/23 docid16558 rev 16 01-apr-2014 15 modified note in package silhouette on cover page. 29-may-2014 16 updated table 1: device summary and table 13: ordering information . table 16. document revision history (continued) date revision changes
docid16558 rev 16 23/23 2n2222ahr please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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